@article {68, title = {Record high efficiency single-walled carbon nanotube/silicon p-n junction solar cells}, journal = {Nano LettNano Lett}, volume = {13}, number = {1}, year = {2013}, note = {Jung, Yeonwoong
Li, Xiaokai
Rajan, Nitin K
Taylor, Andre D
Reed, Mark A
eng
2012/12/15 06:00
Nano Lett. 2013 Jan 9;13(1):95-9. doi: 10.1021/nl3035652. Epub 2012 Dec 17.}, month = {Jan 9}, pages = {95-9}, abstract = {

Carrier transport characteristics in high-efficiency single-walled carbon nanotubes (SWNTs)/silicon (Si) hybrid solar cells are presented. The solar cells were fabricated by depositing intrinsic p-type SWNT thin-films on n-type Si wafers without involving any high-temperature process for p-n junction formation. The optimized cells showed a device ideality factor close to unity and a record-high power-conversion-efficiency of \>11\%. By investigating the dark forward current density characteristics with varying temperature, we have identified that the temperature-dependent current rectification originates from the thermally activated band-to-band transition of carriers in Si, and the role of the SWNT thin films is to establish a built-in potential for carrier separation/collection. We have also established that the dominant carrier transport mechanism is diffusion, with minimal interface recombination. This is further supported by the observation of a long minority carrier lifetime of ~34 mus, determined by the transient recovery method. This study suggests that these hybrid solar cells operate in the same manner as single crystalline p-n homojunction Si solar cells.

}, isbn = {1530-6992 (Electronic)
1530-6984 (Linking)}, doi = {10.1021/nl3035652}, author = {Jung, Y. and Li, X. and Rajan, N. K. and Taylor, A. D. and Reed, M. A.} }