@article {71, title = {Role of HF in oxygen removal from carbon nanotubes: implications for high performance carbon electronics}, journal = {Nano LettNano Lett}, volume = {14}, number = {11}, year = {2014}, note = {Li, Xiaokai
Huang, Jing-Shun
Nejati, Siamak
McMillon, Lyndsey
Huang, Su
Osuji, Chinedum O
Hazari, Nilay
Taylor, Andre D
eng
Research Support, Non-U.S. Gov{\textquoteright}t
Research Support, U.S. Gov{\textquoteright}t, Non-P.H.S.
2014/10/07 06:00
Nano Lett. 2014 Nov 12;14(11):6179-84. doi: 10.1021/nl502401c. Epub 2014 Oct 29.}, month = {Nov 12}, pages = {6179-84}, abstract = {

Oxygen removal from SWNTs is crucial for many carbon electronic devices. This work shows that HF treatment followed by current stimulation is a very effective method for oxygen removal. Using a procedure involving HF treatment, current stimulation and spin-casting AgNWs onto a SWNT thin film, record high efficiency SWNT/p-Si solar cells have been developed.

}, keywords = {carbon electronics, carbon nanotubes, Hydrofluoric acid, photovoltaic devices, silver nanowires}, isbn = {1530-6992 (Electronic)
1530-6984 (Linking)}, doi = { 10.1021/nl502401c}, author = {Li, X. and Huang, J. S. and Nejati, S. and McMillon, L. and Huang, S. and Osuji, C. O. and Hazari, N. and Taylor, A. D.} } @article {68, title = {Record high efficiency single-walled carbon nanotube/silicon p-n junction solar cells}, journal = {Nano LettNano Lett}, volume = {13}, number = {1}, year = {2013}, note = {Jung, Yeonwoong
Li, Xiaokai
Rajan, Nitin K
Taylor, Andre D
Reed, Mark A
eng
2012/12/15 06:00
Nano Lett. 2013 Jan 9;13(1):95-9. doi: 10.1021/nl3035652. Epub 2012 Dec 17.}, month = {Jan 9}, pages = {95-9}, abstract = {

Carrier transport characteristics in high-efficiency single-walled carbon nanotubes (SWNTs)/silicon (Si) hybrid solar cells are presented. The solar cells were fabricated by depositing intrinsic p-type SWNT thin-films on n-type Si wafers without involving any high-temperature process for p-n junction formation. The optimized cells showed a device ideality factor close to unity and a record-high power-conversion-efficiency of \>11\%. By investigating the dark forward current density characteristics with varying temperature, we have identified that the temperature-dependent current rectification originates from the thermally activated band-to-band transition of carriers in Si, and the role of the SWNT thin films is to establish a built-in potential for carrier separation/collection. We have also established that the dominant carrier transport mechanism is diffusion, with minimal interface recombination. This is further supported by the observation of a long minority carrier lifetime of ~34 mus, determined by the transient recovery method. This study suggests that these hybrid solar cells operate in the same manner as single crystalline p-n homojunction Si solar cells.

}, isbn = {1530-6992 (Electronic)
1530-6984 (Linking)}, doi = {10.1021/nl3035652}, author = {Jung, Y. and Li, X. and Rajan, N. K. and Taylor, A. D. and Reed, M. A.} }