<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jung, Y.</style></author><author><style face="normal" font="default" size="100%">Li, X.</style></author><author><style face="normal" font="default" size="100%">Rajan, N. K.</style></author><author><style face="normal" font="default" size="100%">Taylor, A. D.</style></author><author><style face="normal" font="default" size="100%">Reed, M. A.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Record high efficiency single-walled carbon nanotube/silicon p-n junction solar cells</style></title><secondary-title><style face="normal" font="default" size="100%">Nano LettNano Lett</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2013</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Jan 9</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1</style></number><volume><style face="normal" font="default" size="100%">13</style></volume><pages><style face="normal" font="default" size="100%">95-9</style></pages><isbn><style face="normal" font="default" size="100%">1530-6992 (Electronic)&lt;br/&gt;1530-6984 (Linking)</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Carrier transport characteristics in high-efficiency single-walled carbon nanotubes (SWNTs)/silicon (Si) hybrid solar cells are presented. The solar cells were fabricated by depositing intrinsic p-type SWNT thin-films on n-type Si wafers without involving any high-temperature process for p-n junction formation. The optimized cells showed a device ideality factor close to unity and a record-high power-conversion-efficiency of &amp;gt;11%. By investigating the dark forward current density characteristics with varying temperature, we have identified that the temperature-dependent current rectification originates from the thermally activated band-to-band transition of carriers in Si, and the role of the SWNT thin films is to establish a built-in potential for carrier separation/collection. We have also established that the dominant carrier transport mechanism is diffusion, with minimal interface recombination. This is further supported by the observation of a long minority carrier lifetime of ~34 mus, determined by the transient recovery method. This study suggests that these hybrid solar cells operate in the same manner as single crystalline p-n homojunction Si solar cells.&lt;/p&gt;
</style></abstract><accession-num><style face="normal" font="default" size="100%">23237412</style></accession-num><notes><style face="normal" font="default" size="100%">Jung, Yeonwoong&lt;br/&gt;Li, Xiaokai&lt;br/&gt;Rajan, Nitin K&lt;br/&gt;Taylor, Andre D&lt;br/&gt;Reed, Mark A&lt;br/&gt;eng&lt;br/&gt;2012/12/15 06:00&lt;br/&gt;Nano Lett. 2013 Jan 9;13(1):95-9. doi: 10.1021/nl3035652. Epub 2012 Dec 17.</style></notes><auth-address><style face="normal" font="default" size="100%">Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA. yeonwoong.jung@yale.edu</style></auth-address></record></records></xml>